Microelectronics is currently undergoing major changes: The industry is working on promising new materials and chip architectures. But this also means that novel electronic materials must be tested ...
Device scaling in advanced CMOS nodes is becoming more difficult due to patterning limitations and complex 3-D transistor integration schemes. This also makes the devices more sensitive to patterning ...
Abstract: This paper presents a characterization approach to study Local Layout Effects (LLEs) in FinFET devices. Since mechanical stress is commonly used as a mobility booster in modern transistors, ...
Abstract: Indium-gallium–zinc-oxide thin-film transistors (IGZO TFTs) are widely used in numerous applications including displays and are emerging as a promising alternative for flexible IC production ...
A field effect transistor (FET) is a carrier device with three terminals: source, drain, and gate. In FETs, an electric field can be applied at the terminal of the gate, modifying the conductive ...
State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China Institute of Molecular Materials and Devices, Fudan University ...
The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.9b18945. Electrical characteristics of graphene FETs after work ...
LOS ALTOS, Calif.--(BUSINESS WIRE)--Cerebras Systems, a startup dedicated to accelerating Artificial intelligence (AI) compute, today unveiled the largest chip ever built. Optimized for AI work, the ...
Amazon has been getting creepier and creepier lately with their recommendations. Every time I log in, I’m presented with a list of new Blinky LEDs, Raspberry Pi accessories, Arduino shields, and the ...
We report carbon nanotube network field-effect transistors (NTNFETs) that function as selective detectors of DNA immobilization and hybridization. NTNFETs with immobilized synthetic oligonucleotides ...