Key Laboratory of Polar Materials and Devices (Ministry of Education), Department of Electronics, East China Normal University, Shanghai 200241, China Key Laboratory of Polar Materials and Devices ...
Abstract: This article presents a comprehensive physics-based model for back-end-of-line (BEOL)-compatible oxide-semiconductor-based ferroelectric field-effect transistors (FeFETs). The proposed model ...
Abstract: In this work, we investigated the effects of microwave thermal annealing (MWA) on the electrical performance and stability of Indium-Tungsten-Oxide (IWO) thin-film transistors (TFTs). Under ...
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