Abstract: We present a comprehensive overview of the integration of ferroelectrics in vertical NAND for continued z-scaling. Here, we report the engineering of ferroelectric gate stacks to achieve ...
Abstract: The Reaction-Diffusion-Drift (RDD) framework, implemented in both Sentaurus TCAD and standalone 1-D versions, is used to simulate Program/Erase (P/E) cycling related Tunnel Oxide Trap ...
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