Researchers from Ulsan National Institute of Science and Technology (UNIST), Yonsei University, Sungkyunkwan University, ...

Major foundries like Samsung, TSMC, and Intel already have 2nm nodes with GAAFET technology, with Intel calling it RibbonFET, ...

This new storage standard is not very relevant to consumer hardware, but it's fascinating, nonetheless, to see the ...

A US collaboration is making tremendous strides towards the commercialisation of AlN/GaN HEMTs with an AlN buffer, grown on ...

Applied Materials AMAT is benefiting from rising demand for AI infrastructure as the global data center, cloud and technology space moves toward AI integration. These factors are increasing the ...

Inverters must withstand the high levels of heat generated when operating, otherwise system performance and reliability could ...

The N2 node introduces nanosheet-based gate-all-around transistors, replacing the FinFET architecture used since the 16-nanometer generation.

Samsung is reported to be paying $773 million for two high-NA EUV machines – the Twinscan EXE:5200B – with one for delivery this year and one for delivery in H1 2026. Samsung already has a high-NA EUV ...

Engineers at Duke University have developed a groundbreaking method for printing fully functional and recyclable electronics ...

To meet the growing demands of flexible and wearable electronic systems, such as smart watches and biomedical sensors, ...

Trailblazing a solution to these limitations is Vertical Semiconductor, a spin-out of Tomás Palacios’ group at MIT. Vertical ...