In Parts 1, 2, and 3 we took a closer look at calculating “ac” gain and how to desensitize the circuit to temperature and transistor parameter variations. In part 4 we consider the effects of a ...
Transistors are inevitable parts of Electronic circuits. The success of a circuit design lies in the selection of proper transistor type and calculation of voltage and current flowing through it. A ...
A snubber circuit limits voltage spikes in power converters. Snubbers are also used in the output of Class-D audio amplifiers for the same reasons (Fig. 1). When the transistor you use to switch the ...
Last time on Circuit VR, we looked at creating a very simple common emitter amplifier, but we didn’t talk about how to select the capacitor values, or much about why we wanted them. We are going to ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Could a single memristor replace both the driving transistor and storage capacitor in micro-LEDs? Prof. Tae-Geun Kim and team ...
Unijunction transistors (UJTs) were common circuit elements several decades ago. A simple ramp generator could be built from a single UJT and a few other components (Fig. 1). 1. In a simple UJT-based ...
Sometimes I wish FETs had become practical before bipolar transistors. A FET is a lot more like a tube and amplifies voltages. Bipolar transistors amplify current and that makes them a bit harder to ...
GaN Systems has announced its GS66508T-EVBHB Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode power semiconductors in real power circuits. The GS66508T-EVBHB ...
OTTAWA & TOKYO--May 31, 2006--Renesas Technology Corp., the world's leading microcontroller company, and Emerging Memory Technologies Inc. (EMT), a worldwide leader in embedded memory intellectual ...
For 65nm and later-generation processes, the advanced memory has achieved fast operation (250MHz) and low active power (148mW) in a 2Mbit test chip TOKYO, September 26, 2005 -- Renesas Technology Corp ...
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