Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...

This simple circuit has helped me out on many occasions. It is able to check transistors, in the circuit, down to 40 ohms across the collector-base or base-emitter junctions. It can also check the ...

This first part of a two-part series explains how eFuses enable smarter protection against common short conditions in ...

As with many inventions, two people had the idea for an integrated circuit at almost the same time. Transistors had become commonplace in everything from radios to phones to computers, and now ...