Recent advances in Complementary Metal-Oxide-Semiconductor (CMOS) technology have underscored the importance of power-efficient flip-flop designs for modern electronic systems. Over recent years, ...
Designers acknowledge that leakage currents are a primary problem for future generations of electronic circuits and systems. Designers acknowledge that leakage currents are a primary problem for ...
Low power design has become a cornerstone of modern integrated circuit development, driven by energy efficiency demands and the challenges of scaling in nanometre technologies. Innovations in ...
In recent years, gallium nitride (GaN) has emerged as a compelling candidate to complement the silicon material used in wireless communication and power conversion applications. Benefits of GaN ...
Silicon-on-Insulator (SOI) process: Ideal for high-grade automotive and industrial uses, this solution is AEC-Q100 Grade 1 automotive compliant, featuring superior noise reduction, high speeds, and ...
Verification expert Lauro Rizzatti recently interviewed Jean-Marie Brunet, senior marketing director, Scalable Verification Solutions Division (SVSD), Siemens EDA, about the importance of accurate ...
This document is a brochure of NXP’s CMOS logic devices for next generation designs. The NXP VHC/T & XC7 logic provides very high speed and low power over an extended temperature range suitable for a ...
A novel family of advanced fixed-direction voltage level translators developed by Nexperia targets the most common push-pull data interfaces (including UART, SPI, and JTAG protocols) as well as ...
Phoenix—Complimentary Metal Oxide Semiconductor (CMOS) image sensors were developed in the 1960s; however, the adoption rate was slow until the 1990s when technology advances in CMOS improved the ...
Results that may be inaccessible to you are currently showing.
Hide inaccessible results
Feedback